Difference:
CcdCalculations
(7 vs. 8)
Revision 8
11 Sep 2007 - Main.BillRice
META TOPICPARENT
name="CemParameters"
Contents
Tecnai F20
Procedure
Tabulated data
Tecnai F20
Procedure
Go to low-dose Exposure mode
Set beam intensity to 1 second exposure time
In
SerialEM
, set Record time to 1 second, with 1X binning
Take a Record picture and measure average intensity (counts/pixel)
In low-dose pullout tab, choose to measure intensity when screen is down and small screen is exposed (fully covered by beam)
This gives dose measured in electrons per square nm (ie mag taken into account)
From CCD calibration, convert square nm to pixels, get dose in electrons/pixel
Gain = counts per pixel / electrons per pixel = counts per electron
Tabulated data
Magnification
Dose (e/nm^2)
nm/pixel
Dose (e/pixel)
Counts/pixel
Gain
5800
7.298
1.308
39.4
1151.3
29.2
19000
199.2155
0.442
38.92
1169.99
30.06
25000
342.9676
0.352
42.5
1162.54
27.36
29000
448.6993
0.296
39.31
1134.07
28.85
50000
1418.9582
.170
41.0
1205.6
29.40
Changed:
<
<
>
>
NOTE: Counts in
SerialEM
are 2* counts in EM Menu3, gain 0
Jeol 2100F
Procedure
50K Mag, spot 5, set intensity to 10 pA/cm^2 (small screen)
Set gain on CCD to desired level
Insert and center SA Aperture #3; beam should now fully fit on small screen
Read screen current on small screen in pA/cm^2
Take a 1 second Exposure image
Changed:
<
<
Using
ImageJ
?
software, box out area inside exposed circle and measure average counts, sd
>
>
Using ImageJ software, box out area inside exposed circle and measure average counts, sd
Determine pixel area covered by SA aperture as follows:
import image into spider
Changed:
<
<
Using th m command, threshold at level of (mean - 5 standard deviations)
>
>
Using th m command, threshold at level of (mean - 5 standard deviations)
Using Hi T command, measure average of thresholded mask calculated above
Pixel Area = 2048*2048*avg intensity
Total counts = Avg counts * pixel area
Convert current to electrons as follows:
Diameter of small screen = 2.5 cm - > area = 4.91 cm^2
1 sec exposure means 1 Coulomb per Ampere
1 elecron = 1.60 * 10^-19 C
Electrons = (pA/cm^2 * 4.91 cm^2 )/ (1.6*10^-7 e/pA)
Gain = total counts/total electrons
area of SA #3: 1.16 * 10^6 pixels
Tabulated Data
Trial
Mean Counts
Total Counts
Current (pA/cm^2)
Electrons
Gain (counts/electron)
Low 1
2896.8
3.36 *10^9
2.5
7.67 * 10^7
43.8
Low 2
2902.2
3.37 * 10^9
2.5
7.67 * 10^7
43.9
Low 3
2984.3
3.46 * 10^ 9
2.5
7.67 * 10^7
45.1
Low 4
2977.1
3.45 * 10 ^9
2.5
7.67 *10^7
45.0
High 1
11780
1.37 * 10^10
2.5
7.67 * 10^7
178
High 2
11750
1.36 * 10^10
2.5
7.67 *10^7
178
JEOL 3200FSC
Procedure
Similar to Jeol 2100F, but use SA aperture 3 and Entrance aperture 3
Tabulated Data
Aperture
Area
Avg counts
Total Counts
Current (pA/cm^2)
Electrons
Gain
EA 3
3.50 * 10^6
614.524
2.15 * 10^9
2.45
7.52 * 10^7
28.6
SA 3
3.48 * 10^6
614.294
2.14 * 10^9
2.40
7.36 * 10^7
29.1
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BillRice
- 11 Sep 2007
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